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DMN26D0UFB4-7 Diodes Mosfet Enhance Mode Mosfet 20V N-Chan X2-DFN1006

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DMN26D0UFB4-7 Diodes Mosfet Enhance Mode Mosfet 20V N-Chan X2-DFN1006

Brand Name : Diodes

Model Number : DMN26D0UFB4-7

Place of Origin : UAS

MOQ : 1PCS

Price : Negotiated Price

Payment Terms : T/T, L/C

Supply Ability : 300000 PCS+48Hours

Delivery Time : 24-72hours

Packaging Details : Reel

Diodes : DMN26D0UFB4-7

Package : X2-DFN1006

Number of channels : 1 Channel

Vds - drain-source breakdown voltage : 20 V

Id-continuous drain current : 240 mA

Pd-power dissipation : 350 mW

Minimum working temperature : -55℃

Working temperature : +150℃

Packing Quantity : 3000 PCS

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DMN26D0UFB4-7 Diodes MOSFET ENHANCE MODE MOSFET 20V N-Chan X2-DFN1006

DMN26D0UFB4-7B

Manufacturer: Diodes Incorporated
Product Category: MOSFET
Technology: Si
Installation style: SMD/SMT
Package/Box: X2-DFN1006-3
Transistor polarity: N-Channel
Number of channels: 1 Channel
Vds-drain-source breakdown voltage: 20 V
Id-continuous drain current: 240 mA
Rds On-drain-source on-resistance: 3 Ohms
Vgs - gate-source voltage: - 12 V, + 12 V
Vgs th-gate-source threshold voltage: 600 mV
Qg-gate charge: -
Minimum operating temperature: - 55 C
Maximum operating temperature: +150 C
Pd-power dissipation: 350 mW
Channel mode: Enhancement
Series: DMN26
Package: Reel
Configuration: Single
Fall time: 15.2 ns
Forward transconductance - minimum: 180 mS
Rise time: 7.9 ns
Packing quantity: 3000 PCS
Transistor Type: 1 N-Channel
Typical shutdown delay time: 13.4 ns
Typical on-delay time: 3.8 ns
Unit weight: 1 mg

DMN26D0UFB4-7 Diodes Mosfet Enhance Mode Mosfet 20V N-Chan X2-DFN1006

DMN26D0UFB4-7 Diodes Mosfet Enhance Mode Mosfet 20V N-Chan X2-DFN1006


Product Tags:

DMN26D0UFB4-7

      

X2-DFN1006 Diodes Mosfet

      
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